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ASIC Glossary of Terms

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Electronically Alterable Read Only Memory Functionally similar to EEPROM.

Electronically Erasable-Programmable Read Only Memory-A memory device whose content can be established through a programming process (usually the tunneling of electrons across a thin layer of silicon dioxide) to a floating gate. Each memory cell of an EEPROM can be individually erased by imposing a voltage to reverse the flow of electrons to move them away from the floating gate. That cell can then be reprogrammed. Both programming and erasing can be performed without removal of the device from the system in which it is used.

Effectivity date:
The date upon which a new military document or a new revision of an existing document goes into effect.

Particle migration in aluminum thin-film or polysilicon conductors at grain boundaries as a result of high current densities. Electromigration can lead to either an open circuit condition in a conductor or a short between adjacent connectors.

Electrostatic discharge:
The discharge of accumulated static charge (typically of high voltage at low current) from one collector to another, usually by jumping the air gap between the two. Element: A topographically distinguishable part of a microcircuit which contributes directly to its electrical characteristics.

Electrostatic sensitivity:
Susceptibility to damage or degradation as the result of subjection to electrostatic discharge. Typically much higher for MOS devices than for bipolar.

The process of encapsulating or "potting" a molded device.

Erasable Programmable Read Only Memory-A memory device whose content can be established through a programming process (usually hot electron injection) and can be totally erased by exposure to ultraviolet light for sustained periods . When properly erased, the device can be reprogrammed.

Electrostatic Discharge

One of the final steps in processing a wafer during which conductive metal, usually aluminum, is deposited on the surface of the wafer in order to provide electrical interconnection of the various active elements on each die. Metallization may also be accomplished through sputtering.