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ASIC Glossary of Terms



A B C D E F G H I J K L M N O P Q R S T U V W X Y Z All

P-channel:
An MOS process in which MOS transistors are formed by bridging two adjacent P-type diffusions (source and drain) with a dielectric (gate). When the source and the substrate are grounded and a negative voltage is applied to the gate, a conductive sheet of positive charge (P-channel) is created in the surface of the substrate under the dielectric.


P-type:
Semiconductor material in which the majority carriers are holes and are therefore positive.


Packaging density:
For integrated circuits, the number of semiconductor elements per unit area of chip size, frequently expressed in terms of number of gate equivalents.


Parasitic device or element:
An interaction between diffused circuit elements. A good example of a parasitic would be the collector series resistance (RSAT) of a transistor and the associated capacitance of the collector-to-substrate junction.


Particle Count:
A measurement scale for gas or liquid cleanliness, normally stated in parts per cubic foot. For example, a Class 10 working area would be one which contained no more than 10 particles greater than one micron in size per cubic foot of air.


Passivation:
The surface coating of the die (usually thermally grown silicon dioxide, Si02) through which contact and diffusion windows are opened.


Passive device:
Devices such as resistors or capacitors which have no amplification or control characteristics.


PDA:
Perfect Defect Allowable, the maximum percentage of a lot which may fail a 100% screening step without rejecting the lot. The PDA is predicted on the possibility that a failure mechanism which appears in an abnormally high percentage of a lot might appear at a later time in the balance of the lot. It should, therefore, not be used for screens where all defective devices can be observed and removed (such as internal visual or X-ray).


Peripheral device:
A device within a microprocessor device family whose function is required to support the operation of a CPU.


Pin-out:
The listing or diagramm description of the functions assigned to the various package pins of a semiconductor device.


Pinholes:
Small localized areas in the oxide layer with low dielectric strength, usually as a result of contamination.


Planar structure:
A flat-surfaced device structure with the junctions terminating on a single plane.


PNP transistor:
A junction transistor constructed by placing an N-type base between a P-type emitter and a P-type collector. The emitter is normally positive with respect to the base and the collector is normally negative with respect to the base.


PPM:
Parts-per-million. A measurement scale for defect rates in components or impurity levels in materials.


Probe:
Electrical test of semiconductor devices at the wafer level, so named because a metal probe is used to make electrical contact with each of the device's bonding pads.


PROM:
Programmable Read-Only Memory. A memory device whose stored data content is established on an individual device basis through a programming process (usually involving the blowing of fuse links on the surface of the die).Unlike EPROMs and EEPROMs, PROMs cannot be erased and reprogrammed.


Protective device:
A circuit element fabricated on a semiconductor device (usually adjacent to the device input) for the purpose of protecting portions of the device circuitry from transient overstress. A good example of a protective device would be an input diode on a CMOS device, which absorbs electrostatic discharge to prevent that discharge from rupturing the gate oxide.


Prototype
A functional device for verification of the Integrated Circuit.