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ASIC Glossary of Terms



A B C D E F G H I J K L M N O P Q R S T U V W X Y Z All

Data log:
The recording, by individual device serial number, of the actual parametric values measured for that device at a specific electrical test point. Read-and-record can be done for device characterization, drift (delta) measurement, or temperature coefficient computation.


Date code:
A three- or four-digit number identifying the inspection lot from which material was selected. The first two digits (or first digit for a three-digit code) identify the year, the last two the week. Normally, the date code is based upon week of seal for the first sublot of the inspection lot.


Decap
Decapsulation is a chemical etching technique for opening IC plastic packages in order to expose their internal components for examination. Although physically destructive in nature, the process leaves the die, bond pads, and wire bonds intact.


Delta:
A limit applied to the amount of parametric drift that a unit may display across a screen or series of screens (usually applied to burn-in).


Depletion layer:
The region in a semiconductor where essentially all charge carriers have been swept out by the electrical field which exists there.


Destructive testing:
Sample testing which is sufficiently severe to make further use of the tested devices questionable. Devices subjected to destructive testing may not actually be destroyed, but are sufficiently degraded that they should not be used in any system.


Dicing:
Process of reducing a wafer to individual dies


Die size:
Die size refers to the physical surface area of the individual die and is typically measured in square millimeters (mm^2). In essence a "die" is really a chip, but it is only referred to in this way when discussing physical chip parameters and manufacturing issues.


Die sort:
Electrically, a probe to sort the die on a wafer according to predetermined electrical limits. Visually, a sort into Condition A, Condition B, or commercial grade die.


Die:
A single square or rectangular piece of silicon into which a specific semiconductor circuit has been diffused.


Dielectric isolation:
A semiconductor fabrication process in which each circuit element is enclosed within an oxide barrier that completely isolates the element from all other diffused elements.


Diffused area:
A portion of the die where impurities have been diffused into the surface of the silicon at high temperature to change its electrical characteristics through the creation of a concentration of N or P charge carriers.


Digital device:
A microcircuit in which the inputs accept logic states (such as 0 or 1) and convert these to logic states at the output(s) according to a predetermined set of logic equations or function tables.


DIP:
Abbreviation for Dual-In-line Package.


Discrete:
A semiconductor or semiconductor die containing only one active device, such as a transistor or a diode.


Distributed processing:
In digital data systems, the utilization of a number of dedicated processors distributed throughout the system for the purpose of doing computation locally.


Doping:
The introduction of an impurity into the crystal lattice of a semiconductor to modify its electrical properties by creating a concentration of N or P carriers.


DRC
Design Rule Checks


Dual-in-line package:
A package (either hermetic or molded) with its leads emanating from both sides of the package, then turning downward.


DUT:
Device Under Test.